N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 25A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 39mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel MOSFET uses advanced trench technology

文件：881.12 Kbytes Page：5 Pages

N Channel Product

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 20 (7/28) AWG Tinned Copper 0.038 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.058+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1061 80C 300V VW-1 20 AWG --- LLXXXX CSA AWM I A/B 80C 300 VOLTS FT1 CE ROHS {0} * = Factory

Heyco® Original Series-35 Liquid Tight Cordgrips

文件：212.94 Kbytes Page：1 Pages

1/2 ??Square Trimpot짰 Trimming Potentiometer

文件：117.49 Kbytes Page：1 Pages

Customer Specification

文件：69.88 Kbytes Page：3 Pages

4700

文件：48.7 Kbytes Page：1 Pages