N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

DB9 Male to Female Serial Extension Cables and Adapters

Features & Benefits Fully Moulded Design 9 D Type Connectors wire 1 to 1 with all line wired Available in a variety of lengths Custom lengths manufactured to order

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 24 (7/32) AWG Tinned Copper 0.024 b) Insulation 0.032 Wall, Nom. PVC 0.088+/- 0.004 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1015/1230 105C 600V VW-1 IEC 60332-2 24 AWG OR CRU AWM I A/B 105C 600V FT1 OR TEW 105C 600V FT1 CE ROHS

20mm COIN CELL HOLDERS

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200 MHz minimum 3 dB BW

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Customer Specification

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