P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -28A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -28A, RDS(ON) = 32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 50mW @VGS = -4.5V. Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

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P Channel MOSFET

Size F Extruded Aluminum Box With Cover

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Hinged Cable Holders

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IP67 Sealed Toggle Switches

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IP67 Sealed Toggle Switches

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Floor socket: 3301E

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