P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

P-ChannelEnhancementModeFieldEffectTransistor

文件：447.73 Kbytes Page：4 Pages

LowVoltage1.15Vto5.5V,Single-ChannelBidirectionalLogicLevelTranslator

GENERALDESCRIPTION TheADG3301isasingle-channel,bidirectionallogicleveltranslator.ItcanbeusedinmultivoltagedigitalsystemapplicationssuchasdatatransferbetweenalowvoltageDSP/controllerandahighervoltagedevice.Theinternalarchitectureallowsthedevicetoperformbidi

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文件：24.62 Kbytes Page：1 Pages

IP67SealedToggleSwitches

文件：565.43 Kbytes Page：1 Pages

IP67SealedToggleSwitches

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Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

文件：13.85927 Mbytes Page：51 Pages