P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -27A, RDS(ON) = 76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 92mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -29A, RDS(ON) = 55 mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 60 mW @VGS = -4.5V. Switched mode

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed

P-Channel 100 V (D-S) MOSFET

文件：993.08 Kbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：101.67 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：157.56 Kbytes Page：5 Pages