P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -29A, RDS(ON) = 55 mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 60 mW @VGS = -4.5V. Switched mode

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel 100 V (D-S) MOSFET

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P-Channel Enhancement Mode Power MOSFET

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丝印代码：YJP30P10A；P-Channel Enhancement Mode Field Effect Transistor

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