Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 20mW @VGS = 4.5V. Lead-free plating ; RoHS compliant. -30V , -18A , RDS(ON) = 20mW @VGS = 10V. RDS(ON) = 30mW @VGS

Dual N & P MOSFET

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJV4109R

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowable power dissip

0.31 Inch Single Digit Display

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Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager

文件：334.97 Kbytes Page：24 Pages