Axial Lead and Cartridge Fuses - Midget

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Axial Lead and Cartridge Fuses

Axial Lead and Cartridge Fuses Laminated Body Fast-Acting Type BLF Series Fibre Body Fast-Acting Type BLN Series

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

RF Manual 16th edition

RF Manual 16th edition

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES • Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

Base station LDMOS transistor

Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phase

Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phase

Power LDMOS transistor

General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enab

Power LDMOS transistor

General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enab

HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage

VHF POWER MOSFET

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System

N-Channel Enhancement Mode

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System ​​​​​​​

HF power MOS transistor

RF Manual 16th edition

RF Manual 16th edition

VHF power MOS transistor

VHP power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking cod

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking cod

Power LDMOS transistor

General description 200 W LDMOS power transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excell

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

RF Manual 16th edition

RF Manual 16th edition

RF Manual 16th edition

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

HFA/HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

RF Manual 16th edition

HF/VHF power MOS transistor

DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. FEATURES • Withstands full load mismatch • Emitter ballasting resistors for an optimum temperature profile

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

HF/VHF power MOS transistor

RF Manual 16th edition

HF/VHF power MOS transistor BLF177

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Lowintermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch.

Power LDMOS transistor

General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 :  Outp

RF Manual 16th edition

RF Manual 16th edition

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 : 

RF Manual 16th edition

RF Manual 16th edition

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 : 

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = −26 dBc • Ea

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 90 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = −26 dBc • Easy p

UHF power LDMOS transistor

DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: – Output power = 10 W (PEP) – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz – Efficiency

Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

Power LDMOS transistor

General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

Power LDMOS transistor

General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

Power LDMOS transistor

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designe

Power LDMOS transistor