Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES • Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

Base station LDMOS transistor

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 25V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

Integrated Circuit AM Tuner w/RF Amp

Integrated Circuit AM Tuner w/RF Amp

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS PARTMARKING DETAIL - T1049

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV = 80V * Very low saturation voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight converters * Emergency lighting * DC-DC converters

Low Power Chopper Stabilized Operational Amplifier with Internal Capacitors

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