General description

A 600 W LDMOS RF power transistor for transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

Features and benefits

 Excellent ruggedness (VSWR  40 : 1 through all phases)

 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

 High power gain

 High efficiency

 Designed for broadband operation (400 MHz to 1000 MHz)

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Communication transmitter applications

 Industrial applications