HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage

VHF POWER MOSFET

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System

HF power MOS transistor

RF Manual 16th edition

N-Channel Enhancement Mode

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System ​​​​​​​

VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz.FEATURES:\n• PG = 20 dB Typ. at 30 W /28 MHz\n• Omnigold™ Metalization System

HF power MOS transistor

Trans RF MOSFET N-CH 65V 6A 4-Pin SOT-123A

封装/外壳：SOT-123A 包装：托盘 描述：RF FET NCHA 65V 27DB SOT123A 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF power MOS transistor

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HF power MOS transistor

文件：78.86 Kbytes Page：12 Pages

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP