RF Manual 16th edition

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 : 

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 128 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Power LDMOS transistor

Power LDMOS transistor

文件：339.5 Kbytes Page：14 Pages

RF Manual 16th edition

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 : 

RF Manual 16th edition

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 128 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET LDMOS DL 50V SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

文件：339.5 Kbytes Page：14 Pages

Power LDMOS transistor

文件：339.5 Kbytes Page：14 Pages

Power LDMOS transistor

文件：339.5 Kbytes Page：14 Pages

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 110V 28DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF variable capacitance diode

DESCRIPTION The BB178 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Ultra small plastic

PNP SILICON TRANSISTORS

PNP Silicon Transistors BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input driver stages.

PNP SILICON TRANSISTORS

PNP Silicon Transistors BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input driver stages.

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE