HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

HF/VHF power MOS transistor

HF/VHF power MOS transistor BLF177

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Lowintermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch.

RF Manual 16th edition

封装/外壳：SOT-121B 包装：托盘 描述：RF FET NCHA 125V 19DB SOT121B 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF/VHF power MOS transistor

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HF/VHF power MOS transistor

文件：123.29 Kbytes Page：20 Pages

封装/外壳：SOT-121B 包装：卷带（TR） 描述：RF FET NCHA 125V SOT121B 分立半导体产品 晶体管 - FET，MOSFET - 射频

MONROE 177A

TYPICAL APPLICATIONS  Converting, coating, and printing processes  Dry particle transport systems  “Static-free” environments  Explosive atmospheres - safely monitors potentially hazardous sites to detect charge build-up. Monroe 1036 sensors are factory mutual research approved: Class I,

SMD Power Inductor

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SMD Power Inductor

文件：309.21 Kbytes Page：5 Pages

SMD Power Inductor

文件：309.21 Kbytes Page：5 Pages

Hermetically Sealed 3.3V, Low IF, Wide VCC, High Gain Optocouplers

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