General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications

in the HF to 110 MHz band.

Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

IDq of 40 mA, a tp of 100 μs with δ of 20 :

 Output power = 1200 W

 Power gain = 28.5 dB

 Efficiency = 75

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (10 MHz to 110 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Industrial, scientific and medical applications

 FM transmitter applications