Power LDMOS transistor

General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

Power LDMOS transistor

封装/外壳：SOT-1121B 包装：托盘 描述：RF FET LDMOS 135V 28DB SOT1121B 分立半导体产品 晶体管 - FET，MOSFET - 射频

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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PRINTED CIRCUIT PINS

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