DESCRIPTION

90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:

– Output power = 90 W (PEP)

– Gain = 12 dB

– Efficiency = 32

– dim = −26 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (1800 to 2000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.