BF90晶体管资料
BF906别名：BF906三极管、BF906晶体管、BF906晶体三极管
BF906生产厂家：美国得克萨斯仪表公司
BF906制作材料：Si-PNP
BF906性质：调幅 （AM）_调频 （FM）
BF906封装形式：直插封装
BF906极限工作电压：
BF906最大电流允许值：
BF906最大工作频率：>200MHZ
BF906引脚数：3
BF906最大耗散功率：
BF906放大倍数：
BF906图片代号：A-23
BF906vtest：0
BF906htest：200000100
- BF906atest：0
BF906wtest：0
BF906代换 BF906用什么型号代替：BF324,BF440,BF441,BF450,BF451,BF706,3CG112C,
BF90价格
参考价格：￥0.4550
型号：BF904 品牌：NXP/PHILIPS 备注：这里有BF90多少钱，2026年最近7天走势，今日出价，今日竞价，BF90批发/采购报价，BF90行情走势销售排行榜，BF90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol | PHILIPS 飞利浦 |   | ||
Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol | PHILIPS 飞利浦 | | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES | PHILIPS 飞利浦 | | ||
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES | PHILIPS 飞利浦 | | ||
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de | PHILIPS 飞利浦 | | ||
Dual-gate MOS-FETs DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch | PHILIPS 飞利浦 | | ||
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual-gate MOS-FETs DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch | PHILIPS 飞利浦 | | ||
Dual-gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short channe | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp | PHILIPS 飞利浦 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de | PHILIPS 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
包装：零售封装 描述：Replacement for Honda BF90 Year | ETC 知名厂家 | ETC | | |
包装：零售封装 描述：Replacement for Honda BF90 Year | ETC 知名厂家 | ETC | | |
depletion-type n-channel dual gate MOSFET 文件：91.68 Kbytes Page：2 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
波导负载 | XIALI | | ||
波导负载 | XIALI | | ||
Silicon n-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
DC Blower Fan 89x89x21.5mm 文件：365.69 Kbytes Page：1 Pages | COOLCOX 奇凌电子 | | ||
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs 文件：309.91 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
N-channel dual gate MOS-FETs 文件：309.91 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual gate MOS-FETs | ETC 知名厂家 | ETC | |
BF90产品属性
- 类型
描述
- 电压驻波比：
1.30
- 平均功率：
50
- 峰值功率：
1
- 波导型号：
BJ900
- 外形尺寸：
130×80×50
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
8048 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
2016+ |
SOT-143 |
3140 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
25+ |
SOT143 |
20300 |
NXP/恩智浦原装特价BF904R即刻询购立享优惠#长期有货 |
|||
恩XP |
22+ |
SOT143R |
9000 |
原厂渠道,现货配单 |
|||
恩XP |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
2450+ |
SOT143 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
23+ |
SOT143R |
5000 |
||||
恩XP |
24+ |
N/A |
16000 |
原装正品现货支持实单 |
|||
PHI |
2223+ |
SOT-143 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
恩XP |
26+ |
30000 |
房间原装现货特价热卖,有单详谈 |
BF90规格书下载地址
BF90参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BFAP58
- BFAP57
- BFAP15
- BF979(S)
- BF970(A)
- BF969(S)
- BF968
- BF967
- BF961
- BF960
- BF959
- BF939
- BF936
- BF926
- BF923TS
- BF922TS
- BF921TS
- BF921(S)
- BF920TS
- BF920
- BF914
- BF909WR
- BF909R
- BF909AR
- BF909A
- BF909
- BF908WR
- BF908R
- BF908
- BF906
- BF904WR
- BF904R
- BF904AR
- BF904A
- BF904
- BF901R
- BF901
- BF8-F
- BF891
- BF890
- BF888
- BF885S
- BF885(S)
- BF883S
- BF883(S)
- BF881
- BF880
- BF879
- BF872EA
- BF872BA
- BF872(A,S,SA)
- BF872
- BF871EA
- BF871BA
- BF871(A,S,SA)
- BF871
- BF870EA
- BF870BA
- BF870(A,S,SA)
- BF870
- BF869EA
- BF869BA
- BF869(A,S,SA)
- BF869
- BF862
- BF861C
- BF861B
- BF861A
- BF861
- BF860
- BF859
- BF858
- BF857
- BF850BF
- BF849
- BF848
BF90数据表相关新闻
BFG235
进口代理
2022-11-12BFC233920474
BFC233920474
2022-10-13BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
2021-11-10BF862215
JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
2020-8-5BF998，现货销售，只售原装，兴中扬电子
BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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