Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

Dual-gate MOS-FETs

RF Manual 16th edition

N-channel dual-gate MOSFET

封装/外壳：SOT-143R 包装：散装 描述：MOSFET DUAL GATE 12V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-143R 包装：管件 描述：MOSFET DUAL GATE 12V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short channe

POWER TRANSISTORS(15A,90W)

8-Bit, 165MSPS DIGITAL-TO-ANALOG CONVERTER

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