DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES

• Specially designed for use at 5 V supply voltage

• Short channel transistor with high transfer admittance to

input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications with 3 to 7 V supply voltage

such as television tuners and professional

communications equipment.