N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

N-channel dual-gate MOSFET

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

RF Manual 16th edition

RF Manual 16th edition

N-channel dual-gate MOSFET

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

N-channel dual-gate MOSFET

RF Manual 16th edition

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

N-channel dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de

封装/外壳：SOT-143R 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

文件：309.91 Kbytes Page：14 Pages

N-channel dual gate MOS-FETs

文件：309.91 Kbytes Page：14 Pages

封装/外壳：TO-253-4，TO-253AA 包装：散装 描述：MOSFET N-CH 7V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

N-channel dual-gate MOS-FET

文件：91.77 Kbytes Page：12 Pages

N-channel dual-gate MOS-FET

文件：91.77 Kbytes Page：12 Pages

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.