N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

N-channel dual gate MOS-FETs

RF Manual 16th edition

N-channel dual-gate MOSFET

N-channel dual gate MOS-FETs

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

RF Manual 16th edition

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S

RF Manual 16th edition

N-channel dual gate MOS-FETs

N-channel dual-gate MOSFET

封装/外壳：SOT-143R 包装：散装 描述：MOSFET N-CH 7V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOSFET

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：MOSFET N-CH 7V 30MA SOT143R 分立半导体产品 晶体管 - FET，MOSFET - 射频

Compact, Portable Military Managed Gigabit Ethernet Switch

FEATURES Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial applications, including: • UAVs • Land autonomous vehicles (UGVs) • Robots • Mobile equipment fielded in harsh environments Modern plat

INA219 High Side DC Current Sensor Breakout - 26V ±3.2A Max

文件：238.78 Kbytes Page：2 Pages

M12?륚 Die Cast Passive I/O Box

文件：169.61 Kbytes Page：3 Pages

NYLON TUBE SPACERS

文件：202.86 Kbytes Page：1 Pages

NYLON TUBE SPACERS

文件：202.86 Kbytes Page：1 Pages