N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

N-channel dual gate MOS-FETs

RF Manual 16th edition

N-channel dual-gate MOSFET

封装/外壳：SOT-143R 包装：卷带（TR） 描述：MOSFET N-CH 7V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-143R 包装：管件 描述：MOSFET N-CH 7V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

M12?륚 Plastic Passive I/O Box

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Precision Coaxial Termination

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Stripline Mounting Fixed Attenuators (DC to 8 GHz)

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