N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

N-channel dual gate MOS-FETs

RF Manual 16th edition

N-channel dual-gate MOSFET

封装/外壳：SOT-143R 包装：卷带（TR） 描述：MOSFET N-CH 7V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-143R 包装：管件 描述：MOSFET N-CH 7V 40MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

POWER TRANSISTORS(15A,90W)

LOW VOLTAGE CMOS 1:18 CLOCK DISTRIBUTION CHIP

Low Voltage CMOS 1:18 Clock Distribution Chip The MPC909 is a 1:18 low voltage clock distribution chip. The 18 outputs are LVCMOS or LVTTL compatible and feature the drive strength to drive 50Ω series or parallel terminated transmission lines. With output–to–output skews of 250ps, the MPC909

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current