N-channel dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de

RF Manual 16th edition

N-channel dual-gate MOS-FET

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 40MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 40MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

文件：138.81 Kbytes Page：12 Pages

N-channel dual-gate MOS-FET

文件：138.81 Kbytes Page：12 Pages

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

POWER TRANSISTORS(15A,90W)

LOW VOLTAGE CMOS 1:18 CLOCK DISTRIBUTION CHIP

Low Voltage CMOS 1:18 Clock Distribution Chip The MPC909 is a 1:18 low voltage clock distribution chip. The 18 outputs are LVCMOS or LVTTL compatible and feature the drive strength to drive 50Ω series or parallel terminated transmission lines. With output–to–output skews of 250ps, the MPC909

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current