N-channel dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de

RF Manual 16th edition

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 40MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 40MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

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N-channel dual-gate MOS-FET

文件：138.81 Kbytes Page：12 Pages

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

VHF variable capacitance diodes

DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF

M12?륚 Plastic Passive I/O Box

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Precision Coaxial Termination

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Stripline Mounting Fixed Attenuators (DC to 8 GHz)

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