DESCRIPTION

Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

FEATURES

• Intended for low voltage operation

• Short channel transistor with high ratio |Yfs|:Cis

• Low noise gain-controlled amplifier to 1 GHz

• BF901R has reverse pinning.