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位置：首页 > IC中文资料第3004页 > AM23

AM23价格

参考价格：￥0.8450

型号：AM2319P-T1 品牌：AIC 备注：这里有AM23多少钱，2026年最近7天走势，今日出价，今日竞价，AM23批发/采购报价，AM23行情走势销售排行榜，AM23报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AM23

ANALOGUE TIMERS ELECTROMECHANICAL CAM TIMERS

Modular cam timer assembly kits Cycle time 3 secs to 24 hrs One on/off period per cycle 2, 4 or 6 micro switches 110 or 230V operation Screw adjustable cams (tool supplied)

TEMPATRON

AM2300

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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AM2300E3R

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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AM2300E3SR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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AM2300E3SVR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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AM2300E3VR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. FEATURES ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capabi

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AM2300N

N-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products

ANALOGPOWER

AM2301

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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AM2301A

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

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AM2301AE3SR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

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AM2301AE3SVR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

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AM2301B

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

FEATURES Super High dense cell design for extremely low R DS(ON) Reliable and Rugged Available in SOT 23 package APPLICATIONS Power Management Portable Equipment and Battery Powered Systems.

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AM2301E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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AM2301E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other genera

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AM2301PE

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

ANALOGPOWER

AM2302

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

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AM2302E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

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AM2302E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

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AM2303

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

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AM2303E3R

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

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AM2303E3VR

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general

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AM2303P

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

ANALOGPOWER

AM2304

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304 is available in a SOT-23 package. FEATURES  30V/5.1A RDS(ON)= 25mΩ(max.) @ VGS= 10V RDS(ON)= 35mΩ(max.) @ VGS= 4.5V  Reliable and Rugged  Available in a SOT-23 package. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered

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AM2304A

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS 2 0 V ID(A)= 5.5 A R DS(ON) ON)=22 m Ω ( @V GS =10V R DS(ON) ON)=32 m Ω ( @V GS =4.5V AM2304A is available in a SOT 2 3 package. FEATURES ⚫ Fast switch ⚫ A vailable in a SOT 23 package APPLICATION ⚫ H a nd Held Instruments ⚫ Load Switch ⚫ DC/DC Convert

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AM2304AE3R

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS 2 0 V ID(A)= 5.5 A R DS(ON) ON)=22 m Ω ( @V GS =10V R DS(ON) ON)=32 m Ω ( @V GS =4.5V AM2304A is available in a SOT 2 3 package. FEATURES ⚫ Fast switch ⚫ A vailable in a SOT 23 package APPLICATION ⚫ H a nd Held Instruments ⚫ Load Switch ⚫ DC/DC Convert

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AM2304AE3VR

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS 2 0 V ID(A)= 5.5 A R DS(ON) ON)=22 m Ω ( @V GS =10V R DS(ON) ON)=32 m Ω ( @V GS =4.5V AM2304A is available in a SOT 2 3 package. FEATURES ⚫ Fast switch ⚫ A vailable in a SOT 23 package APPLICATION ⚫ H a nd Held Instruments ⚫ Load Switch ⚫ DC/DC Convert

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AM2304E3R

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304 is available in a SOT-23 package. FEATURES  30V/5.1A RDS(ON)= 25mΩ(max.) @ VGS= 10V RDS(ON)= 35mΩ(max.) @ VGS= 4.5V  Reliable and Rugged  Available in a SOT-23 package. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered

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AM2304E3VR

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304 is available in a SOT-23 package. FEATURES  30V/5.1A RDS(ON)= 25mΩ(max.) @ VGS= 10V RDS(ON)= 35mΩ(max.) @ VGS= 4.5V  Reliable and Rugged  Available in a SOT-23 package. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered

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AM2305

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

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AM2305E3R

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

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AM2305E3VR

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

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AM2305P

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such a

ANALOGPOWER

AM2305PE

P-Channel 20-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

ANALOGPOWER

AM2306

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

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AM2306E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

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AM2306E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

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AM2307

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

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AM2307E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

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AM2307E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

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AM2308

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON) ON)= 67mΩ(Typ.) @ V GS = 10V R DS(ON) ON)= 76 mΩ(Typ.) @ V GS = 4.5V AM2308 is available in a SOT 2 3 S package. FEATURES ⚫ Fast Swit c h ⚫ A vailable in a SOT 2 3 S package APPLICATION ⚫ Head Held I nstruments ⚫ P ower Management

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AM2308E3SR

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON) ON)= 67mΩ(Typ.) @ V GS = 10V R DS(ON) ON)= 76 mΩ(Typ.) @ V GS = 4.5V AM2308 is available in a SOT 2 3 S package. FEATURES ⚫ Fast Swit c h ⚫ A vailable in a SOT 2 3 S package APPLICATION ⚫ Head Held I nstruments ⚫ P ower Management

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AM2308E3SVR

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON) ON)= 67mΩ(Typ.) @ V GS = 10V R DS(ON) ON)= 76 mΩ(Typ.) @ V GS = 4.5V AM2308 is available in a SOT 2 3 S package. FEATURES ⚫ Fast Swit c h ⚫ A vailable in a SOT 2 3 S package APPLICATION ⚫ Head Held I nstruments ⚫ P ower Management

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AM2309

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2309 is available in SOT-23S package. FEATURES  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characterized Avalanche Voltage and

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AM2309E3SR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2309 is available in SOT-23S package. FEATURES  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characterized Avalanche Voltage and

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AM2309E3SVR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2309 is available in SOT-23S package. FEATURES  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characterized Avalanche Voltage and

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AM2310

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

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AM2310E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

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AM2310E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2310 is available in SOT-23S package. FEATURES  18V/3.5A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manageme

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AM2310N

N-Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powe

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AM2311

MOSFET P-CHANNEL ENHANCEMENT MODE

-16V/-3A, RDS(ON) = 110mΩ(MAX) @VGS = -4.5V. RDS(ON) = 140mΩ(MAX) @VGS = -2.5V. -Super High dense cell design for extremely low RDS(ON) -Reliable and Rugged. -Available in SOT-23S Package DESCRIPTION The AM2311 is available in SOT-23S package. APPLICATION -Power Management -Po

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AM2312

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

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AM2312E3SR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

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AM2312E3SVR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

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AM2313

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

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AM2313E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

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AM2313E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

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AM2313P

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and batte

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AM2314N

N-Channel 20V (D-S) MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products suc

ANALOGPOWER

AM2314NE

N-Channel 20-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

ANALOGPOWER

AM2317

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2317 is available in SOT-23 package. FEATURES  -20V/-4.6A , RDS(ON)= 48mΩ (Max.) @ VGS=-4.5V RDS(ON)= 70mΩ (Max.) @ VGS=-2.5V RDS(ON)=110mΩ(Max.) @ VGS=-1.8V  Reliable and Rugged  Available in SOT-23 Package APPLICATIONS  Power Management in Notebook Computer, P

AITSEMI

创瑞科技

AM23产品属性

  • 类型

    描述

  • 型号

    AM23

  • 制造商

    TEMPATRON

  • 功能描述

    CAM TIMER 110V MOTOR

  • 制造商

    TEMPATRON

  • 功能描述

    CAM TIMER, 110V, MOTOR

AM23供应商更多...

更新时间：2026-1-27 15:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市卓越微芯电子有限公司
AM2336N-T1-PF
亚柏|AnalogPower
25+
SOT23
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市南科功率半导体有限公司
AM2398N-T1-PF
NK/南科功率
2025+
SOT-23
3600
国产南科平替供应大量
询价
深圳市明嘉莱科技有限公司
AM23ESGC
CARLOGAVAZZI
25+
TO-236-3SC-59SOT-23-
156443
明嘉莱只做原装正品现货
询价
深圳市拓亿芯电子有限公司
AM2336N
ANALOGPOWER
25+
SOT-23
21000
原厂原标正品假一罚十
询价
上海鑫科润电子科技有限公司
AM2302
AOSONG
14+
温度传感器
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
询价
深圳市宇创芯科技有限公司
AM2320B
AOSONG
24+
SMT
9600
原装现货,优势供应,支持实单!
询价
深圳诚思涵科技有限公司
AM2371P-T1-PF
ANALOGPOW
16+
SOT-23
3250
进口原装现货/价格优势!
询价
深圳市金华微盛电子有限公司
AM2305PE-T1-PF
ANALOGPOW
19+
SOT23
38000
询价
深圳市坤融电子科技有限公司
AM2307RA
AXELITE
2025+
SOT23-3
2800
原装进口价格优 请找坤融电子!
询价
深圳市毅创弘电子科技有限公司
AM23000-A1
M/A
24+
CSOP
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
询价

AM23芯片相关品牌

AM23规格书下载地址

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AM23数据表相关新闻

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