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位置：首页 > IC中文资料第3004页 > AM23

AM23价格

参考价格：￥0.8450

型号：AM2319P-T1 品牌：AIC 备注：这里有AM23多少钱，2024年最近7天走势，今日出价，今日竞价，AM23批发/采购报价，AM23行情走势销售排行榜，AM23报价。
型号 功能描述 生产厂家&企业 LOGO 操作
AM2300

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

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AM2300E3R

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

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AM2300E3SR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

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AM2300E3SVR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

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AM2300E3VR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫Highpowerandcurrenthandlingcapabi

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AM2300N

N-Channel 20-V (D-S) MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.TypicalapplicationsareDC-DCconverters,powermanagementinportableandbattery-poweredproducts

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AM2301

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)..lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchorothergenera

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AM2301A

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ AvailableinSOT-23SPackage APPLICATION Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

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AM2301AE3SR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ AvailableinSOT-23SPackage APPLICATION Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

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AM2301AE3SVR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ AvailableinSOT-23SPackage APPLICATION Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

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AM2301B

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

FEATURES SuperHighdensecelldesignforextremelylow RDS(ON)ReliableandRugged AvailableinSOT23package APPLICATIONS PowerManagement PortableEquipmentandBatteryPoweredSystems.

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AM2301E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)..lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchorothergenera

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AM2301E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)..lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchorothergenera

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AM2301PE

P-Channel 20-V (D-S) MOSFET

TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssuchascomputers,printers,PCMCIA

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AM2302

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2302usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. AM2302isavailableinaSOT-23Spackage. FEATURES

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AM2302E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2302usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. AM2302isavailableinaSOT-23Spackage. FEATURES

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AM2302E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2302usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. AM2302isavailableinaSOT-23Spackage. FEATURES

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AM2303

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2303istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchor othergeneral

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AM2303E3R

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2303istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchor othergeneral

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AM2303E3VR

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2303istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchor othergeneral

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AM2303P

P-Channel 20-V (D-S) MOSFET

TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssuchascomputers,printers,PCMCIA

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AM2304

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304isavailableinaSOT-23package. FEATURES 30V/5.1A RDS(ON)=25mΩ(max.)@VGS=10V RDS(ON)=35mΩ(max.)@VGS=4.5V ReliableandRugged AvailableinaSOT-23package. APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered

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AM2304A

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS20V ID(A)= 5.5A R DS(ON)ON)=22mΩ(@VGS=10V R DS(ON)ON)=32mΩ(@VGS=4.5V AM2304AisavailableinaSOT23package. FEATURES ⚫Fastswitch ⚫AvailableinaSOT23package APPLICATION ⚫HandHeldInstruments ⚫LoadSwitch ⚫DC/DCConvert

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AM2304AE3R

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS20V ID(A)= 5.5A R DS(ON)ON)=22mΩ(@VGS=10V R DS(ON)ON)=32mΩ(@VGS=4.5V AM2304AisavailableinaSOT23package. FEATURES ⚫Fastswitch ⚫AvailableinaSOT23package APPLICATION ⚫HandHeldInstruments ⚫LoadSwitch ⚫DC/DCConvert

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AM2304AE3VR

MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=30V V GS20V ID(A)= 5.5A R DS(ON)ON)=22mΩ(@VGS=10V R DS(ON)ON)=32mΩ(@VGS=4.5V AM2304AisavailableinaSOT23package. FEATURES ⚫Fastswitch ⚫AvailableinaSOT23package APPLICATION ⚫HandHeldInstruments ⚫LoadSwitch ⚫DC/DCConvert

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AM2304E3R

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304isavailableinaSOT-23package. FEATURES 30V/5.1A RDS(ON)=25mΩ(max.)@VGS=10V RDS(ON)=35mΩ(max.)@VGS=4.5V ReliableandRugged AvailableinaSOT-23package. APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered

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AM2304E3VR

MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2304isavailableinaSOT-23package. FEATURES 30V/5.1A RDS(ON)=25mΩ(max.)@VGS=10V RDS(ON)=35mΩ(max.)@VGS=4.5V ReliableandRugged AvailableinaSOT-23package. APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered

AITSEMIAiT Semiconductor Inc.

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AM2305

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2305usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. TheAM2305isavailableinSOT-23package. FEATURES VDS=-20V,ID=

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AM2305E3R

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2305usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. TheAM2305isavailableinSOT-23package. FEATURES VDS=-20V,ID=

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AM2305E3VR

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2305usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. TheAM2305isavailableinSOT-23package. FEATURES VDS=-20V,ID=

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AM2305P

P-Channel 20-V (D-S) MOSFET

P-Channel20-V(D-S)MOSFET TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssucha

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AM2305PE

P-Channel 20-V (D-S) MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •WhiteLEDboostconverters •AutomotiveSystems •IndustrialDC/DCConversionCircuits

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Analog Power

AnalogPower
AM2306

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2306usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchandPWMapplications. TheAM2306isavailableinSOT-23Spackage. FEATURES VDS=30V,ID=5.8A RDS(ON)

AITSEMIAiT Semiconductor Inc.

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AM2306E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2306usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchandPWMapplications. TheAM2306isavailableinSOT-23Spackage. FEATURES VDS=30V,ID=5.8A RDS(ON)

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AM2306E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION TheAM2306usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchandPWMapplications. TheAM2306isavailableinSOT-23Spackage. FEATURES VDS=30V,ID=5.8A RDS(ON)

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AM2307

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2307isavailableinSOT-23Spackage. FEATURES -20V/-4.3A, RDS(ON)=55mΩ(MAX)@VGS=-10V. RDS(ON)=70mΩ(MAX)@VGS=-4.5V. RDS(ON)=120mΩ(MAX)@VGS=-2.5V SuperHighdensecelldesignforextremelylowRDS(ON) ReliableandRugged AvailableinSOT-23SPackage

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AM2307E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2307isavailableinSOT-23Spackage. FEATURES -20V/-4.3A, RDS(ON)=55mΩ(MAX)@VGS=-10V. RDS(ON)=70mΩ(MAX)@VGS=-4.5V. RDS(ON)=120mΩ(MAX)@VGS=-2.5V SuperHighdensecelldesignforextremelylowRDS(ON) ReliableandRugged AvailableinSOT-23SPackage

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AM2307E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2307isavailableinSOT-23Spackage. FEATURES -20V/-4.3A, RDS(ON)=55mΩ(MAX)@VGS=-10V. RDS(ON)=70mΩ(MAX)@VGS=-4.5V. RDS(ON)=120mΩ(MAX)@VGS=-2.5V SuperHighdensecelldesignforextremelylowRDS(ON) ReliableandRugged AvailableinSOT-23SPackage

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AM2308

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON)ON)=67mΩ(Typ.)@VGS=10V R DS(ON)ON)=76mΩ(Typ.)@VGS=4.5V AM2308isavailableinaSOT23Spackage. FEATURES ⚫FastSwitch ⚫AvailableinaSOT23Spackage APPLICATION ⚫HeadHeldInstruments ⚫PowerManagement

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AM2308E3SR

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON)ON)=67mΩ(Typ.)@VGS=10V R DS(ON)ON)=76mΩ(Typ.)@VGS=4.5V AM2308isavailableinaSOT23Spackage. FEATURES ⚫FastSwitch ⚫AvailableinaSOT23Spackage APPLICATION ⚫HeadHeldInstruments ⚫PowerManagement

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AM2308E3SVR

MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION VDS=60V VGS=±20V ID(A)=3.3A R DS(ON)ON)=67mΩ(Typ.)@VGS=10V R DS(ON)ON)=76mΩ(Typ.)@VGS=4.5V AM2308isavailableinaSOT23Spackage. FEATURES ⚫FastSwitch ⚫AvailableinaSOT23Spackage APPLICATION ⚫HeadHeldInstruments ⚫PowerManagement

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AM2309

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2309isavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-2.8A=100mΩ RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance FullyCharacterizedAvalancheVoltageand

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AM2309E3SR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2309isavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-2.8A=100mΩ RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance FullyCharacterizedAvalancheVoltageand

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AM2309E3SVR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2309isavailableinSOT-23Spackage. FEATURES VDS=-20V RDS(ON),VGS@-4.5V,IDS@-2.8A=100mΩ RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance FullyCharacterizedAvalancheVoltageand

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AM2310

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2310isavailableinSOT-23Spackage. FEATURES 18V/3.5A, RDS(ON)=80mΩ(MAX)@VGS=4.5V. RDS(ON)=90mΩ(MAX)@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManageme

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AM2310E3SR

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2310isavailableinSOT-23Spackage. FEATURES 18V/3.5A, RDS(ON)=80mΩ(MAX)@VGS=4.5V. RDS(ON)=90mΩ(MAX)@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManageme

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AM2310E3SVR

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2310isavailableinSOT-23Spackage. FEATURES 18V/3.5A, RDS(ON)=80mΩ(MAX)@VGS=4.5V. RDS(ON)=90mΩ(MAX)@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManageme

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AM2310N

N-Channel Logic Level MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarelowervoltage application,powermanagementinportableandbattery-powe

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AM2311

MOSFET P-CHANNEL ENHANCEMENT MODE

-16V/-3A, RDS(ON)=110mΩ(MAX)@VGS=-4.5V. RDS(ON)=140mΩ(MAX)@VGS=-2.5V. -SuperHighdensecelldesignforextremelylow RDS(ON) -ReliableandRugged. -AvailableinSOT-23SPackage DESCRIPTION TheAM2311isavailableinSOT-23Spackage. APPLICATION -PowerManagement -Po

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AM2312

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

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AM2312E3SR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2312E3SVR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2313

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2313E3SR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2313E3SVR

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2313P

P - Channel Logic Level MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AnalogPower

Analog Power

AnalogPower
AM2314N

N-Channel 20V (D-S) MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarepowerswitch,powermanagementinportableandbattery-poweredproductssuc

AnalogPower

Analog Power

AnalogPower
AM2314NE

N-Channel 20-V (D-S) MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •WhiteLEDboostconverters •AutomotiveSystems •IndustrialDC/DCConversionCircuits

AnalogPower

Analog Power

AnalogPower
AM2317

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2317isavailableinSOT-23package. FEATURES -20V/-4.6A, RDS(ON)=48mΩ(Max.)@VGS=-4.5V RDS(ON)=70mΩ(Max.)@VGS=-2.5V RDS(ON)=110mΩ(Max.)@VGS=-1.8V ReliableandRugged AvailableinSOT-23Package APPLICATIONS PowerManagementinNotebookComputer,P

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
AM2317A

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317AistheP-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOStechnology.Thisadvancedtrenchtechnologydevicesarewellsuitedforhighefficiencyfastswitchingapplications,lowin-linepowerlossareneededinsmalloutlinesurfacemountpackage.

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

AM23产品属性

  • 类型

    描述

  • 型号

    AM23

  • 制造商

    TEMPATRON

  • 功能描述

    CAM TIMER 110V MOTOR

  • 制造商

    TEMPATRON

  • 功能描述

    CAM TIMER, 110V, MOTOR

AM23供应商更多...

更新时间：2024-4-26 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
AM2300N-T1-PF
ANALOGP
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
AM2300N-T1-PF
Analogpow
20+
SOT23-3
63258
原装优势主营型号-可开原型号增税票
询价
深圳市得捷芯城科技有限公司
AM2300E3R
AIT-
23+
NA/
6250
原装现货,当天可交货,原型号开票
询价
深圳市力拓辉电子有限公司
AM2300E3SVR
AiT
21+
-
3000
全新原装鄙视假货15118075546
询价
深圳市环球伟业电子有限公司
AM2300E3R
VB
SOT-23
10000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市豪迈兴电子有限公司
AM2300N
ANALOGPOWER
2339+
6423
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市科恒伟业电子有限公司
AM2300E3R
ANALOGPOW
1742+
SOT23-3
98215
只要网上有绝对有货!只做原装正品!
询价
深圳市能创芯电子科技有限公司
AM2300N
ANALOGPOW
23+
SOT23
3000
原装正品假一罚百!可开增票!
询价
深圳诚思涵科技有限公司
AM2300E3R
VB
23+
SOT-23
10000
原装正品,假一罚十!
询价
深圳市润联芯城科技有限公司
AM2300E3R
AIT-IC
23+
SOT-23
50000
原装正品 支持实单
询价

AM23芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

AM23规格书下载地址

AM23参数引脚图相关

AM23数据表相关新闻

DdatasheetPDF页码索引

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