MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

SOT-23/SOT-23S 晶體管

温湿度传感器探头

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package. FEATURES  VDS = -20V,ID =

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such a

P-Channel 20-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

MOSFET

P-Channel 30 V (D-S) MOSFET

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Insulated Low Thermal EMF Spade Lug

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High Current Toroid Inductors

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High Current Toroid Inductors

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High Current Toroid Inductors Horizontal or vertical mount

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High Current Toroid Inductors

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