MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

SOT-23/SOT-23S 晶体管

数字温湿度传感器模块

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package. FEATURES

N-Channel 20-V (D-S) MOSFET

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MOSFET

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2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

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P-CHANNEL MOSFET N-CHANNEL MOSFET

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Nylon Hose Clamps

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