MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

SOT-23/SOT-23S 晶體管

温湿度传感器防雨淋探头

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package. FEATURES  VDS = 30V,ID = 5.8A RDS(ON)

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MOSFET

Lowpass Filter

Specifications Filter Type Lowpass Insertion Loss 40 dB Source and Load Impedance 75 Ω

SOT-23 Plastic-Encapsulate MOSFETS

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