MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

SOT-23/SOT-23S 晶體管

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2313 is available in SOT-23S package. FEATURES  -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugged.  Available in SOT-23S Package APPLICATION  Power Manag

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and batte

MOSFET

P-Channel 60 V (D-S) MOSFET

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High Current Toroid Inductors

文件：112.13 Kbytes Page：1 Pages

High Current Toroid Inductors Horizontal or vertical mount

文件：112.13 Kbytes Page：1 Pages

High Current Toroid Inductors

文件：112.13 Kbytes Page：1 Pages

High Current Toroid Inductors

文件：112.13 Kbytes Page：1 Pages

High Current Toroid Inductors

文件：112.13 Kbytes Page：1 Pages