MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2317 is available in SOT-23 package. FEATURES  -20V/-4.6A , RDS(ON)= 48mΩ (Max.) @ VGS=-4.5V RDS(ON)= 70mΩ (Max.) @ VGS=-2.5V RDS(ON)=110mΩ(Max.) @ VGS=-1.8V  Reliable and Rugged  Available in SOT-23 Package APPLICATIONS  Power Management in Notebook Computer, P

SOT-23/SOT-23S 晶体管

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET -20V SINGLE P-CHANNEL MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 5.3 A R DS(ON) ON)=3 1 mΩ(Typ.)@V GS 4.5 V R DS(ON) ON)=4 0 mΩ(Typ.)@V GS 2.5 V R DS(ON) 50 mΩ(Typ.)@V GS 1.8 V R DS(ON) 60 mΩ(Typ.)@V GS 1.5 V The AM2317B is available in SOT-23 package. FEATURES  Trech DMOS Technology  1.5V Low gate dri

MOSFET -20V SINGLE P-CHANNEL MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 5.3 A R DS(ON) ON)=3 1 mΩ(Typ.)@V GS 4.5 V R DS(ON) ON)=4 0 mΩ(Typ.)@V GS 2.5 V R DS(ON) 50 mΩ(Typ.)@V GS 1.8 V R DS(ON) 60 mΩ(Typ.)@V GS 1.5 V The AM2317B is available in SOT-23 package. FEATURES  Trech DMOS Technology  1.5V Low gate dri

MOSFET -20V SINGLE P-CHANNEL MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 5.3 A R DS(ON) ON)=3 1 mΩ(Typ.)@V GS 4.5 V R DS(ON) ON)=4 0 mΩ(Typ.)@V GS 2.5 V R DS(ON) 50 mΩ(Typ.)@V GS 1.8 V R DS(ON) 60 mΩ(Typ.)@V GS 1.5 V The AM2317B is available in SOT-23 package. FEATURES  Trech DMOS Technology  1.5V Low gate dri

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2317 is available in SOT-23 package. FEATURES  -20V/-4.6A , RDS(ON)= 48mΩ (Max.) @ VGS=-4.5V RDS(ON)= 70mΩ (Max.) @ VGS=-2.5V RDS(ON)=110mΩ(Max.) @ VGS=-1.8V  Reliable and Rugged  Available in SOT-23 Package APPLICATIONS  Power Management in Notebook Computer, P

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2317 is available in SOT-23 package. FEATURES  -20V/-4.6A , RDS(ON)= 48mΩ (Max.) @ VGS=-4.5V RDS(ON)= 70mΩ (Max.) @ VGS=-2.5V RDS(ON)=110mΩ(Max.) @ VGS=-1.8V  Reliable and Rugged  Available in SOT-23 Package APPLICATIONS  Power Management in Notebook Computer, P

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

MOSFET

Bandpass Filter

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Low Voltage and Power Applications

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High Current Toroid Inductors

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High Current Toroid Inductors Horizontal or vertical mount

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High Current Toroid Inductors

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