MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

SOT-23/SOT-23S 晶體管

温湿度传感器模块

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2301A is available in SOT-23S package. FEATURES  VDS =-20V  RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  Available in SOT-23S Package APPLICATION  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

文件：49.97 Kbytes Page：2 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件：324.91 Kbytes Page：22 Pages