MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

SOT-23/SOT-23S 晶體管

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2307 is available in SOT-23S package. FEATURES  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package

2305-2310 MHz, 2350-2355 MHz Ceramic Duplexer

MOSFET

P-Channel 20-V (D-S) MOSFET

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7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

3M??Masking Tape 2307

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Pneumatic muffler

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Nylon Hose Clamps

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