2SK15数据表ic资料东芝货源供应商报价TOSHIBA-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第6839页 > 2SK15

2SK15价格

参考价格：￥0.8450

型号：2SK1577 品牌：sony 备注：这里有2SK15多少钱，2025年最近7天走势，今日出价，今日竞价，2SK15批发/采购报价，2SK15行情走势销售排行榜，2SK15报价。

型号	功能描述	生产厂家企业	LOGO
2SK15	CHOPPER SWITCHING APPLICATIONS Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen	TOSHIBA 东芝	TOSHIBA
2SK150	Low Noise Amplifier Low Noise Audio Amplifier Applications Differencial Amplifier Applications.	TOSHIBA 东芝	TOSHIBA
2SK1500	MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK1500	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1501	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1501	MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK1502	MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK1502	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1503-01	Fuji power MOSFET Specification Scope This specifies Fuji Power MOSFET 2SK1503-01 Outline I) Construction N-channel enhancement mode power MOSFET II) Application for switching III) Outview TO-220 (MK5C27595)	Fuji 富士通	Fuji
2SK1505	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.022Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1505-MR	N-CHANNEL SILICON POWER MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below.	Fuji 富士通	Fuji
2SK1506	N-CHANNEL SILICON POWER MOSFET Features ● High current ● Low on-resistance ● Low driving power ● High forward transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters	Fuji 富士通	Fuji
2SK1506	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.030Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1507	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1507	N-Channel Silicon Power Mos-fet(F-II Series) Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK1507	Drain Current ?밒D=9A@ TC=25C DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.	ISC 无锡固电	ISC
2SK1507-01	N-Channel Silicon Power Mos-fet(F-II Series) Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK1507-01MR	N-Channel Silicon Power Mos-fet(F-II Series) Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK1508	N-channel MOS-FET 60V 0,035W 35A 60W Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance	Fuji 富士通	Fuji
2SK1508	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1509	N-CHANNEL SILICON POWER MOS-FET Features ● High current ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters	Fuji 富士通	Fuji
2SK1509	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK150A	Low Noise Amplifier Low Noise Audio Amplifier Applications Differencial Amplifier Applications.	TOSHIBA 东芝	TOSHIBA
2SK1511	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1514	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.030Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1515	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1515	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1515-E	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1516	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1516	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1516-E	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1517	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1517	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SK1517	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1517-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1518	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1518	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1518-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1519	Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1519	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1519-E	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK152	2SK152 2SK152	SonySony Corporation 索尼	Sony
2SK1520	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1520	Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1520-E	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1521	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1521-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1521-E1-E	450V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1521-E1-ET2	450V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1522	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1522-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1522-E1-E	500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1522-E1-ET2	500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1523	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1524	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1525	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1526	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1526	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1526-E	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1527	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi

2SK15产品属性

类型
描述
型号
2SK15
功能描述
TRANSISTOR | JFET | N-CHANNEL | 450UA I(DSS) | TO-17

2SK15供应商更多...

更新时间：2025-11-26 13:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	2SK1592-T1-AZ	RENESAS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市鸿昌盛电子科技有限公司	2SK1591-T1(G18)		25+		300	公司现货库存	询价
深圳市高捷芯城科技有限公司	2SK1590-T1B-A	Renesas(瑞萨)	24+	标准封装	13048	支持大陆交货,美金交易。原装现货库存。	询价
深圳市凌旭科技有限公司	2SK1501	NEC	2016+	TO220	3000	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳诚思涵科技有限公司	2SK1582-T1B-A	NEC	16+	SOT-23	24000	进口原装现货/价格优势!	询价
深圳市美思瑞电子科技有限公司	2SK1501	NEC	22+	TO220	12245	现货,原厂原装假一罚十!	询价
深圳市纳艾斯科技有限公司	2SK15	TOSHIBA	24+	CAN4	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
贸泽芯城（深圳）电子科技有限公司	2SK15	T/NEC	23+	CAN	9539	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市科恒伟业电子有限公司	2SK15-Y	TOSHIBA/东芝	2450+	TO-18-4	9850	只做原装正品现货或订货假一赔十!	询价
深圳市坤融电子科技有限公司	2SK1593	RENESAS/瑞萨	2025+	SOT-89	5000	原装进口价格优请找坤融电子!	询价

2SK15芯片相关品牌

2SK15规格书下载地址

2SK15参数引脚图相关

2SK15数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-8
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-12
2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SK15价格

2SK15产品属性

2SK15供应商更多...

2SK15芯片相关品牌

2SK15规格书下载地址

2SK15参数引脚图相关

2SK15数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引