位置：首页 > IC中文资料第6126页 > 2SK1520-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1520-E | SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 |  | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
DrainCurrent?밒D=30A@TC=25C 文件：67.41 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SK1520-E产品属性
- 类型
描述
- 型号
2SK1520-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
6000 |
诚信服务，绝对原装原盘 |
||||
HITACHI/日立 |
24+ |
to3p |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
HIT |
2020+ |
TO-3PL |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
23+ |
NA/ |
3333 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
06+ |
TO-264 |
83 |
||||
RENESAS/瑞萨 |
23+ |
TO-3PL |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
HIT |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
|||
RENESAS |
22+23+ |
TO-264 |
27392 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
TO-264 |
608900 |
原包原标签100%进口原装常备现货! |
2SK1520-E芯片相关品牌
2SK1520-E规格书下载地址
2SK1520-E参数引脚图相关
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- 5000
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK2415-Z-E1-AZ ManufacturerPartNumber: 2SK2415-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP PackageDescriptio
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2019-10-30
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