Low Noise Amplifier

Low Noise Audio Amplifier Applications Differencial Amplifier Applications.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Fuji power MOSFET Specification

Scope This specifies Fuji Power MOSFET 2SK1503-01 Outline I) Construction N-channel enhancement mode power MOSFET II) Application for switching III) Outview TO-220 (MK5C27595)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.022Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

Features ● High current ● Low on-resistance ● Low driving power ● High forward transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.030Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

Drain Current ?밒D=9A@ TC=25C

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

N-channel MOS-FET

60V 0,035W 35A 60W Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL SILICON POWER MOS-FET

Features ● High current ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters

Low Noise Amplifier

Low Noise Audio Amplifier Applications Differencial Amplifier Applications.

iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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Drain Current ?밒D=10A@ TC=25C

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Power MOSFET

iscN-Channel MOSFET Transistor

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N-CHANNEL SILICON POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

iscN-Channel MOSFET Transistor

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N-Channel 650V (D-S) Power MOSFET

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MOSFET N 600V 9.0A 0.850 OHM

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

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