Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive ·DC-DC converter, power switch and solenoid drive · Silver ATX,adapter,TV,lighting,Server power

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET •  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching;

Drain Current ?밒D=40A@ TC=25C

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Silicon N Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

500V - 40A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard

500V - 40A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard

Power MOSFETs

l500V - 40A - MOS FET High Speed Power Switching

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