N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

Drain Current ?밒D=9A@ TC=25C

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET N 600V 9.0A 0.850 OHM

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N-Channel 650V (D-S) Power MOSFET

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N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier