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型号	功能描述	生产厂家企业	LOGO
2SK152	2SK152 2SK152	SonySony Corporation 索尼	Sony
2SK152	Silicon N Channel Junction FET	SonySony Corporation 索尼	Sony
2SK1520	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1520	Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1520-E	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1521	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1521-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1521-E1-E	450V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1521-E1-ET2	450V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1522	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1522-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1522-E1-E	500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1522-E1-ET2	500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1523	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1524	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1525	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1526	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1526	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1526-E	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1527	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1527	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1527	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive ·DC-DC converter, power switch and solenoid drive · Silver ATX,adapter,TV,lighting,Server power	ISC 无锡固电	ISC
2SK1527-E	Silicon N Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1527-E1-E	500V - 40A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1527-E1-ET2	500V - 40A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1528	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1528	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1528L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1528L	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1528L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1528L-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1528S	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1528S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1528S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1528STL-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1529	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK1529	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) High-Power Amplifier Application ● High breakdown voltage : VDSS = 180 V ● High forward transfer admittance : \|Yfs\| = 4.0 S (typ.) ● Complementary to 2SJ200	TOSHIBA 东芝	TOSHIBA
2SK1520	Drain Current ?밒D=30A@ TC=25C 文件：67.41 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1521	isc N-Channel MOSFET Transistor 文件：300.66 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1521	Silicon N-Channel MOS FET 文件：49.57 Kbytes Page：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1521	Silicon N-Channel MOS FET	RENESAS 瑞萨	RENESAS
2SK1521-E1-E	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK1521-E1-E_15	450V - 50A - MOS FET High Speed Power Switching 文件：93.84 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SK1522	isc N-Channel MOSFET Transistor 文件：300.67 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1522	Silicon N-Channel MOS FET 文件：49.57 Kbytes Page：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1522-E1-E_15	500V - 50A - MOS FET High Speed Power Switching 文件：95.52 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SK1523	iscN-Channel MOSFET Transistor 文件：823.6 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1524	iscN-Channel MOSFET Transistor 文件：824.58 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1525	iscN-Channel MOSFET Transistor 文件：824.49 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1526	Drain Current ?밒D=40A@ TC=25C 文件：67.42 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1527	Drain Current ?밒D=40A@ TC=25C 文件：67.41 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1527-E1-E_15	l500V - 40A - MOS FET High Speed Power Switching 文件：95.73 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SK1528L	isc N-Channel MOSFET Transistor 文件：300.38 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1528S	isc N-Channel MOSFET Transistor 文件：299.85 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1529	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) 文件：490.19 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK1529	High-Power Amplifier Application 文件：274.01 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK1529	isc N-Channel MOSFET Transistor 文件：285.31 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1529_06	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) 文件：490.19 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK1529_09	High-Power Amplifier Application 文件：274.01 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA

2SK152产品属性

类型
描述
型号
2SK152
制造商
SONY
制造商全称
Sony Corporation
功能描述
2SK152

2SK152供应商更多...

更新时间：2025-10-11 17:49:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	2SK1528STR	HITACHI	01+	SOT263/3	2600	全新原装进口自己库存优势	询价
深圳市力拓辉电子有限公司	2SK1522		22+		5000		询价
深圳市星宇佳科技有限公司	2SK1520-EQ	RENESAS/瑞萨	06+	TO-264	83		询价
深圳市科恒伟业电子有限公司	2SK1520-EQ	RENESAS/瑞萨	2450+	TO-264	9850	只做原装正品现货或订货假一赔十!	询价
深圳市柯尔基电子有限公司	2SK152-4	SONY/索尼	23+24	TO-92	16790	专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC	询价
深圳市明嘉莱科技有限公司	2SK1522	HITACHI/日立	24+	TO 3PL	158319	明嘉莱只做原装正品现货	询价
深圳市汇莱威科技有限公司	2SK1525	新电源	2024	TO3P	58209	16余年资质绝对原盒原盘代理渠道更多数量	询价
千层芯半导体(深圳)有限公司	2SK1529/2SJ200	TOSHIBA	24+	TO-3P	365000	TOSHIBA代理分销商绝对进口原装现货假一罚十	询价
深圳市振宏微科技有限公司	2SK1528L	HIT	23+	TO-251	17000	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2SK1520-EQ	RENESAS	25+23+	TO-264	27392	绝对原装正品全新进口深圳现货	询价

2SK152芯片相关品牌

2SK152规格书下载地址

2SK152参数引脚图相关

2SK152数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-8
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-12
2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

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2SK152产品属性

2SK152供应商更多...

2SK152芯片相关品牌

2SK152规格书下载地址

2SK152参数引脚图相关

2SK152数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引