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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK152 | 2SK152 2SK152 | SonySONY 索尼 |  |   |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 |  | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
450V-50A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.08Ωtyp.(atID=25A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
450V-50A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.08Ωtyp.(atID=25A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500V-50A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.085Ωtyp.(atID=25A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter •Qualitygrade:Standard | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500V-50A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.085Ωtyp.(atID=25A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •Built-infastrecoverydiode(trr=120ns) •Suitableformotorcontrol,switchingregulator,DC-DCconverter •Qualitygrade:Standard | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive ·DC-DCconverter,powerswitchandsolenoiddrive ·SilverATX,adapter,TV,lighting,Serverpower | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconNChannelMOSFET SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500V-40A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.12Ωtyp.(atID=20A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •SuitableforswitchingregulatorandDC-DCconverter •Qualitygrade:Standard | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500V-40A-MOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.12Ωtyp.(atID=20A,VGS=10V,Ta=25°C) •Highspeedswitching •Lowdrivecurrent •SuitableforswitchingregulatorandDC-DCconverter •Qualitygrade:Standard | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATIONS) High-PowerAmplifierApplication ●Highbreakdownvoltage:VDSS=180V ●Highforwardtransferadmittance:|Yfs|=4.0S(typ.) ●Complementaryto2SJ200 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
DrainCurrent?밒D=30A@TC=25C 文件：67.41 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：300.66 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconN-ChannelMOSFET 文件：49.57 Kbytes Page：9 Pages | HitachiHitachi, Ltd. 日立公司 | | | |
450V-50A-MOSFETHighSpeedPowerSwitching 文件：93.84 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET 文件：49.57 Kbytes Page：9 Pages | HitachiHitachi, Ltd. 日立公司 | | | |
iscN-ChannelMOSFETTransistor 文件：300.67 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
500V-50A-MOSFETHighSpeedPowerSwitching 文件：95.52 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：823.6 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：824.58 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：824.49 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
DrainCurrent?밒D=40A@TC=25C 文件：67.42 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
DrainCurrent?밒D=40A@TC=25C 文件：67.41 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
l500V-40A-MOSFETHighSpeedPowerSwitching 文件：95.73 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：300.38 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：299.85 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：285.31 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
High-PowerAmplifierApplication 文件：274.01 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATIONS) 文件：490.19 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATIONS) 文件：490.19 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：274.01 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK152产品属性
- 类型
描述
- 型号
2SK152
- 制造商
SONY
- 制造商全称
Sony Corporation
- 功能描述
2SK152
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
专业铁帽 |
TO-3P |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
HITACHI |
23+ |
SOT263/3 |
20000 |
全新原装假一赔十 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
24+ |
TO3PL |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
HIT |
23+ |
TO-251 |
17000 |
专做原装正品,假一罚百! |
|||
HITACHI/日立 |
24+ |
TO 3PL |
158319 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
23+ |
TO-3P |
3000 |
特价库存 |
|||
HIT |
21+ |
TO3P |
11 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
06+ |
TO-264 |
83 |
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2SK152规格书下载地址
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