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TK12价格

参考价格：￥1.3000

型号：TK12125CSIL 品牌：TOKO 备注：这里有TK12多少钱，2025年最近7天走势，今日出价，今日竞价，TK12批发/采购报价，TK12行情走势销售排行榜，TK12报价。

型号	功能描述	生产厂家企业	LOGO
TK12	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK12	Phase Control Thyristor	Dynex	Dynex
TK1214K	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1214M	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1216K	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1216M	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1218K	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1218M	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1220K	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK1220M	Phase Control Thyristor FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers	Dynex	Dynex
TK125A60Z1	MOSFETs Silicon N-Channel MOS Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)	TOSHIBA 东芝	TOSHIBA
TK125E60Z1	MOSFETs Silicon N-Channel MOS Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)	TOSHIBA 东芝	TOSHIBA
TK125N60Z1	MOSFETs Silicon N-Channel MOS Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)	TOSHIBA 东芝	TOSHIBA
TK125U60Z1	MOSFETs Silicon N-Channel MOS Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)	TOSHIBA 东芝	TOSHIBA
TK125Z60Z1	MOSFETs Silicon N-Channel MOS Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)	TOSHIBA 东芝	TOSHIBA
TK12A10K3	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A45D	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12A45D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A45D	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12A50D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A50D	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12A50D	Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12A50D5	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A50D5	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12A50W	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)	TOSHIBA 东芝	TOSHIBA
TK12A53D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A53D	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.58Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12A55D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A55D	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) • High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12A60D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A60D	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12A60U	Field Effect Transistor Silicon N Channel MOS Type (DTMOS?? Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12A60U	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12A60W	MOSFETs Silicon N-Channel MOS (DTMOS?? Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications • Switching Voltage Regulators	TOSHIBA 东芝	TOSHIBA
TK12A80W	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)	TOSHIBA 东芝	TOSHIBA
TK12D60U	Field Effect Transistor Silicon N Channel MOS Type (DTMOS?? Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12D60U	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12E60U	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12E60W	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=11.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.3Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12E80W	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)	TOSHIBA 东芝	TOSHIBA
TK12E80W	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=11.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.45Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12J55D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12J60U	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.36Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
TK12J60U	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12P50W	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)	TOSHIBA 东芝	TOSHIBA
TK12P60W	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 11.6A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.34Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
TK12X53D	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12X60U	Switching Regulator Applications Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 600 V) • Enhancement-mode: Vt	TOSHIBA 东芝	TOSHIBA
TK12X60U	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
TK12.5A	Topstek Current Transducer 文件：110.32 Kbytes Page：3 Pages	TOPSTEK	TOPSTEK
TK1205800000G	包装：散装描述：TERM BLK 12P SIDE ENTRY 5MM PCB 连接器，互连器件线对板	ETC 知名厂家	ETC
TK121	Low TC Precision Radial-Lead Film Resistors 文件：166.44 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
TK121	Type TK Low TC Precision Radial-Lead Film Resistors 文件：547.57 Kbytes Page：2 Pages	Caddock	Caddock
TK1228SBN	Visible LED Chips	ETC 知名厂家	ETC
TK125A60Z1	Power MOSFET (N-ch 500V	TOSHIBA 东芝	TOSHIBA
TK125V65Z	MOSFETs Silicon N-Channel MOS 文件：471.72 Kbytes Page：10 Pages	TOSHIBA 东芝	TOSHIBA
TK12A50W	isc N-Channel MOSFET Transistor 文件：288.81 Kbytes Page：2 Pages	ISC 无锡固电	ISC
TK12A55D	iscN-Channel MOSFET Transistor 文件：319.29 Kbytes Page：2 Pages	ISC 无锡固电	ISC
TK12A60D	isc N-Channel MOSFET Transistor 文件：298.83 Kbytes Page：2 Pages	ISC 无锡固电	ISC
TK12A60U	isc N-Channel MOSFET Transistor 文件：287.91 Kbytes Page：2 Pages	ISC 无锡固电	ISC

TK12产品属性

类型
描述
型号
TK12
制造商
DYNEX
制造商全称
Dynex Semiconductor
功能描述
Phase Control Thyristor

TK12供应商更多...

更新时间：2025-11-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	TK12118CSIL	TOKO	24+	NA/	4931	原厂直销,现货供应,账期支持!	询价
深圳市凌旭科技有限公司	TK1203	MXY	2016+	SOT23-6	6000	全新原装现货,量大价优,公司可售样!	询价
深圳市富利微电子科技有限公司	TK1200001	DIODES/美台	24+	NA	30000	房间原装现货特价热卖,有单详谈	询价
深圳市科恒伟业电子有限公司	TK12P60WRVQ(S	TOSHIBA	2430+	TO-252	8540	只做原装正品假一赔十为客户做到零风险!!	询价
瀚佳科技(深圳)有限公司	TK12.5A		24+	MODULE	2100	公司大量全新现货随时可以发货	询价
深圳市明嘉莱科技有限公司	TK12P60WRVQ(S	TOSHIBA/东芝	21+	明嘉莱只做原装正品现货	2510000	TO-252	询价
深圳市坤融电子科技有限公司	TK12Q60W	TOSHIBA/东芝	2025+	IPAK	5000	原装进口,免费送样品!	询价
深圳市壹芯创科技有限公司	TK12A50D	TOSHIBA/东芝	24+		20000	公司只做原装正品!现货库存!假一罚十!	询价
深圳市中联芯电子有限公司	TK1201	ST/意法	2023+	MODULE	131	主打螺丝模块系列	询价
深圳市勤思达科技有限公司	TK12.5A	TK	24+	DIP5P	5000	全新原装正品,现货销售	询价

TK12芯片相关品牌

TK12规格书下载地址

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TK12数据表相关新闻

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进口代理
2022-11-28
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TK12P60W，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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TK11A65D
TK11A65D，当天发货0755-82732291全新原装现货或门市自取.
2020-9-22
TK12E80W
TK12E80W，当天发货0755-82732291全新原装现货或门市自取.
2020-9-21
TK13A65U
TK13A65U ，当天发货0755-82732291全新原装现货或门市自取.
2020-8-1

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TK12价格

TK12产品属性

TK12供应商更多...

TK12芯片相关品牌

TK12规格书下载地址

TK12参数引脚图相关

TK12数据表相关新闻

TJM4558CDT

TK12P60W

TJR1443AT/0Z

TK11A65D

TK12E80W

TK13A65U

DdatasheetPDF页码索引