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TK12价格

参考价格：￥1.3000

型号：TK12125CSIL 品牌：TOKO 备注：这里有TK12多少钱，2025年最近7天走势，今日出价，今日竞价，TK12批发/采购报价，TK12行情走势销售排行榜，TK12报价。

型号	功能描述	生产厂家&企业	LOGO
TK12	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1214K	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1214M	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1216K	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1216M	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1218K	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1218M	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1220K	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK1220M	Phase Control Thyristor FEATURES ■HighSurgeCapability APPLICATIONS ■HighPowerDrives ■HighVoltagePowerSupplies ■DCMotorControl ■Welding ■BatteryChargers	Dynex Dynex Semiconductor
TK125A60Z1	MOSFETs Silicon N-Channel MOS Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK125E60Z1	MOSFETs Silicon N-Channel MOS Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK125N60Z1	MOSFETs Silicon N-Channel MOS Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK125U60Z1	MOSFETs Silicon N-Channel MOS Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK125Z60Z1	MOSFETs Silicon N-Channel MOS Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A10K3	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A45D	Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.43Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=450V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A45D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A45D	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A50D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A50D	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A50D	Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A50D5	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A50D5	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A50W	MOSFETs Silicon N-Channel MOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A53D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A53D	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.58Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A55D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A55D	Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=550V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A60D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A60D	Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A60U	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A60U	Field Effect Transistor Silicon N Channel MOS Type (DTMOS?? SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A60W	MOSFETs Silicon N-Channel MOS (DTMOS?? Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA) Applications •SwitchingVoltageRegulators	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A80W	MOSFETs Silicon N-Channel MOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12D60U	Field Effect Transistor Silicon N Channel MOS Type (DTMOS?? SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12D60U	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12E60U	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12E60W	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12E80W	MOSFETs Silicon N-Channel MOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12E80W	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12J55D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12J60U	Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancement-mode:Vth=3.0~5.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12J60U	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12P50W	MOSFETs Silicon N-Channel MOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12P60W	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.34Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12X53D	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12X60U	Switching Regulator Applications FieldEffectTransistorSiliconNChannelMOSType(DTMOSⅡ) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancement-mode:Vt	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12X60U	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12.5A	Topstek Current Transducer 文件：110.32 Kbytes Page：3 Pages	TOPSTEK Topstek Inc.
TK1205800000G	包装：散装描述：TERM BLK 12P SIDE ENTRY 5MM PCB 连接器，互连器件线对板	ETC 知名厂家	ETC
TK121	Low TC Precision Radial-Lead Film Resistors 文件：166.44 Kbytes Page：2 Pages	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商
TK121	Type TK Low TC Precision Radial-Lead Film Resistors 文件：547.57 Kbytes Page：2 Pages	Caddock Caddock Electronics, Inc.
TK125V65Z	MOSFETs Silicon N-Channel MOS 文件：471.72 Kbytes Page：10 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TK12A50W	isc N-Channel MOSFET Transistor 文件：288.81 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A55D	iscN-Channel MOSFET Transistor 文件：319.29 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A60D	isc N-Channel MOSFET Transistor 文件：298.83 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A60U	isc N-Channel MOSFET Transistor 文件：287.91 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A60U	N-Channel MOSFET uses advanced trench technology 文件：1.58205 Mbytes Page：5 Pages	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司
TK12A60W	isc N-Channel MOSFET Transistor 文件：289.1 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
TK12A65D	MOSFETs Silicon N-Channel MOS (?-MOS?? 文件：268.77 Kbytes Page：9 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝

TK12产品属性

类型
描述
型号
TK12
制造商
DYNEX
制造商全称
Dynex Semiconductor
功能描述
Phase Control Thyristor

TK12供应商更多...

更新时间：2025-7-14 20:41:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	TK12J60W	TOSHIBA/东芝	25+	TO-3P	45000	TOSHIBA/东芝全新现货TK12J60W即刻询购立享优惠#长期有排单订	询价
深圳市威雅利发展有限公司	TK12.5A	TK	1027	DIP5P	184	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
华富测量(深圳)传感技术有限公司	TK1202140-G1	SUNGMI	2138+	QFP	8960	专营BGA,QFP原装现货,假一赔十	询价
深圳市美思瑞电子科技有限公司	TK12A50D(STA4,X,M)	TOSHIBA	22+	TO-220-3	25000	原装正品，实单请联系	询价
深圳市科恒伟业电子有限公司	TK12P60WRVQ(S	TOSHIBA	2430+	TO-252	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市星宇佳科技有限公司	TK12P50W	TOSHIBA/东芝	16+	TO-252	4000	深圳原装进口无铅现货	询价
深圳市润联芯城科技有限公司	TK12A50D	TOSHIBA/东芝	18+	TO-220F	4750	只做原装正品	询价
深圳市拓亿芯电子有限公司	TK12A65D	TOSHIBA/东芝	23+	TO-220F	9800	原厂原装假一赔十	询价
深圳市汇莱威科技有限公司	TK12P60W	TOSHIBA/东芝	24+	TO-252	503043	免费送样原盒原包现货一手渠道联系	询价
深圳市柯尔基电子有限公司	TK12V60W	TOSHIBA/东芝	23+/24+	DFN-88x8	9865	原装MOS管(场效应管).	询价

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2020-9-21
TK13A65U
TK13A65U，当天发货0755-82732291全新原装现货或门市自取.
2020-8-1

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