丝印代码：K12A80W；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 11.5 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-20 V ;

iscN-Channel MOSFET Transistor

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Standard Triac

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. This device may substitute

3 Quadrants Standard TRIAC

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Bi-Directional Triode Thyristor

文件：650.98 Kbytes Page：5 Pages

Sensitive Gate Bi-Directional Triode Thyristor

文件：447.69 Kbytes Page：6 Pages