Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

isc N-Channel MOSFET Transistor

文件：287.91 Kbytes Page：2 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.58205 Mbytes Page：5 Pages

INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)

General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=12A) * High Commu

Bi-Directional Triode Thyristor

文件：728.89 Kbytes Page：6 Pages

Bi-Directional Triode Thyristor

文件：685.87 Kbytes Page：5 Pages

Bi-Directional Triode Thyristor

文件：689.86 Kbytes Page：5 Pages