MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications • Switching Voltage Regulators

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 11.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

isc N-Channel MOSFET Transistor

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Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)

General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=12A) * High Commu

Bi-Directional Triode Thyristor

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Bi-Directional Triode Thyristor

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Bi-Directional Triode Thyristor

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