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STP55晶体管资料
STP55别名：STP55三极管、STP55晶体管、STP55晶体三极管
STP55生产厂家：
STP55制作材料：Si-NPN
STP55性质：
STP55封装形式：
STP55极限工作电压：500V
STP55最大电流允许值：
STP55最大工作频率：<1MHZ或未知
STP55引脚数：
STP55最大耗散功率：40W
STP55放大倍数：
STP55图片代号：NO
STP55vtest：500
STP55htest：999900
- STP55atest：0
STP55wtest：40
STP55代换 STP55用什么型号代替：3DK306C,
STP55价格
参考价格：￥1.5480
型号：STP55NF06 品牌：STMICROELECTRONICS 备注：这里有STP55多少钱，2025年最近7天走势，今日出价，今日竞价，STP55批发/采购报价，STP55行情走势销售排行榜，STP55报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPEARTING TEMPERATURE FOR STA | STMICROELECTRONICS 意法半导体 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPEARTING TEMPERATURE FOR STA | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
HIGH POWER NPN SILICON TRANSISTOR 文件：189.43 Kbytes Page：3 Pages | SEME-LAB | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.62 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.56 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31569 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：950.76 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 文件：543.12 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 文件：543.12 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.4866 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 文件：337.38 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 文件：337.38 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | |
STP55产品属性
- 类型
描述
- 型号
STP55
- 功能描述
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
2450 |
||||
ST全系列 |
25+23+ |
TO-220 |
26804 |
绝对原装正品全新进口深圳现货 |
|||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
24+ |
TO-220 |
2500 |
原装现货热卖 |
|||
ST/进口原 |
1042+ |
TO-220F |
6000 |
原装正品现货 |
|||
ST |
NEW |
TO-220 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST/意法 |
24+ |
NA/ |
130 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
24+ |
TO220 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ADI |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
ST |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
STP55规格书下载地址
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STP55数据表相关新闻
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DdatasheetPDF页码索引
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