位置：首页 > IC中文资料第637页 > STP55NE06FP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP55NE06FP | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 |   | |
STP55NE06FP | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP55NE06FP | N-Channel 60-V (D-S) MOSFET 文件：950.76 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31569 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 | |
STP55NE06FP产品属性
- 类型
描述
- 型号
STP55NE06FP
- 制造商
STMicroelectronics
- 功能描述
MOSFET, N TO-220FP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
1050 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
24+ |
TO-220F |
4000 |
原装现货热卖 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
23+ |
TO-220F |
25000 |
专做原装正品,假一罚百! |
|||
ST/意法 |
24+ |
65230 |
|||||
VBSEMI/微碧半导体 |
24+ |
TO220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
STP55NE06FP |
25+ |
7000 |
7000 |
||||
ST |
24+ |
N/A |
2000 |
||||
ST |
NEW |
TO-220F |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
2511 |
TO-220F |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
STP55NE06FP规格书下载地址
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DdatasheetPDF页码索引
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