丝印代码：P55NF06；N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET，TO-220封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • 100% avalanche tested \n• Exceptional dv/dt capability;

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

丝印代码：P55NF06FP；N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

N沟道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET，TO-220FP封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • 100% avalanche tested \n• Exceptional dv/dt capability;

N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，TO-220封装

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

N-Channel 60-V (D-S) MOSFET

文件：981.47 Kbytes Page：7 Pages

丝印代码：P55NF06；N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：543.12 Kbytes Page：18 Pages

丝印代码：P55NF06FP；N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：543.12 Kbytes Page：18 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.4866 Mbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：981.47 Kbytes Page：7 Pages

丝印代码：P55NF06L；N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件：337.38 Kbytes Page：15 Pages

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件：337.38 Kbytes Page：15 Pages