STP55NF06价格

参考价格:¥1.5480

型号:STP55NF06 品牌:STMICROELECTRONICS 备注:这里有STP55NF06多少钱,2025年最近7天走势,今日出价,今日竞价,STP55NF06批发/采购报价,STP55NF06行情走势销售排行榜,STP55NF06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STP55NF06

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

STMICROELECTRONICS

意法半导体

STP55NF06

N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

STMICROELECTRONICS

意法半导体

STP55NF06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP55NF06

N沟道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET,TO-220封装

STMICROELECTRONICS

意法半导体

STP55NF06

N-Channel 60-V (D-S) MOSFET

文件:981.47 Kbytes Page:7 Pages

VBSEMI

微碧半导体

STP55NF06

N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件:543.12 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N沟道60 V、0.015 Ohm、50 A STripFET(TM) II功率MOSFET,TO-220FP封装

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件:543.12 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件:1.4866 Mbytes Page:5 Pages

DOINGTER

杜因特

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件:337.38 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFET

文件:981.47 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET,TO-220封装

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件:337.38 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件:337.38 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件:543.12 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOSFET TRANSISTOR

文件:334.62 Kbytes Page:6 Pages

THINKISEMI

思祁半导体

N-CHANNEL POWER MOSFET TRANSISTOR

文件:334.62 Kbytes Page:6 Pages

THINKISEMI

思祁半导体

STP55NF06产品属性

  • 类型

    描述

  • 型号

    STP55NF06

  • 功能描述

    MOSFET N-Ch 60 Volt 55 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-20 19:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
21+
TO-220
20000
全新原装公司现货
ST/意法
25+
TO-220
32000
ST/意法全新特价STP55NF06即刻询购立享优惠#长期有货
ST/意法
21+
TO220
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
ST
2430+
TO220
8540
只做原装正品假一赔十为客户做到零风险!!
ST
25+
TO-220
2659
原装正品!公司现货!欢迎来电洽谈!
ST
21+
TO-220
6880
只做原装,质量保证
ST
23+
TO-220
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法
25+
TO220
22000
一级代理原装现货
ST
23+
TO-220
25000
专做原装正品,假一罚百!

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