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STP55NF06价格
参考价格：￥1.5480
型号：STP55NF06 品牌：STMICROELECTRONICS 备注：这里有STP55NF06多少钱，2025年最近7天走势，今日出价，今日竞价，STP55NF06批发/采购报价，STP55NF06行情走势销售排行榜，STP55NF06报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP55NF06 | N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo | STMICROELECTRONICS 意法半导体 |   | |
STP55NF06 | N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter | STMICROELECTRONICS 意法半导体 | | |
STP55NF06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP55NF06 | N-Channel 60-V (D-S) MOSFET 文件：981.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
STP55NF06 | N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 文件：543.12 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 文件：543.12 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.4866 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 文件：337.38 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 文件：337.38 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 文件：337.38 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 文件：543.12 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL POWER MOSFET TRANSISTOR 文件：334.62 Kbytes Page：6 Pages | THINKISEMI 思祁半导体 | | ||
N-CHANNEL POWER MOSFET TRANSISTOR 文件：334.62 Kbytes Page：6 Pages | THINKISEMI 思祁半导体 | |
STP55NF06产品属性
- 类型
描述
- 型号
STP55NF06
- 功能描述
MOSFET N-Ch 60 Volt 55 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
TO-220(TO-220-3) |
33648 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
23+ |
NA |
19587 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ST |
21+ |
TO-220 |
6880 |
只做原装,质量保证 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST(意法) |
24+ |
TO-220(TO-220-3) |
8699 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
|||
ST/意法 |
24+ |
TO-220 |
67580 |
只做原装 有挂有货 假一罚十 |
|||
ST/意法 |
24+ |
LQFP32 |
9600 |
原装现货,优势供应,支持实单! |
|||
ST |
24+ |
TO-220 |
6868 |
原装现货,可开13%税票 |
|||
ST/意法 |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
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STP55NF06规格书下载地址
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DdatasheetPDF页码索引
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