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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP55NE06LFP | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less | STMICROELECTRONICS 意法半导体 |   | |
STP55NE06LFP | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31569 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 | |
STP55NE06LFP产品属性
- 类型
描述
- 型号
STP55NE06LFP
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+24 |
TO-220 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
ST |
07+ |
TO-220AB |
1000 |
全新原装 绝对有货 |
|||
VBSEMI/微碧半导体 |
24+ |
TO220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
ST |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
TO-220 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
|||
VBSEMI/微碧半导体 |
24+ |
TO220 |
60000 |
||||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ST |
26+ |
TO220 |
60000 |
只有原装 可配单 |
STP55NE06LFP规格书下载地址
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DdatasheetPDF页码索引
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