型号 功能描述 生产厂家&企业 LOGO 操作
STP55NE06L

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less

STMICROELECTRONICS

意法半导体

STP55NE06L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:1.31569 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma

STMICROELECTRONICS

意法半导体

STP55NE06L产品属性

  • 类型

    描述

  • 型号

    STP55NE06L

  • 功能描述

    MOSFET TO-220 N-CH 60V 55A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3304
原厂直销,现货供应,账期支持!
ST
21+
TO-220铁头
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
25+
TO-220
4500
全新原装、诚信经营、公司现货销售!
ST
24+
TO-220
4000
原装现货热卖
ST
23+
TO-220F
25000
专做原装正品,假一罚百!
ST全系列
25+23+
TO-220
26805
绝对原装正品全新进口深圳现货
VBSEMI/微碧半导体
24+
TO220
7800
全新原厂原装正品现货,低价出售,实单可谈
ST
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
24+
N/A
3250
ST
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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