位置：首页 > IC中文资料第6103页 > STP55N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP55N06 | N-Channel 60-V (D-S) MOSFET 文件：981.62 Kbytes Page：7 Pages | VBSEMI 微碧半导体 |   | |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPEARTING TEMPERATURE FOR STA | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPEARTING TEMPERATURE FOR STA | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.56 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 55mΩ ID 6A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve | ISC 无锡固电 | | ||
60V N-Channel MOSFET 文件：1.18877 Mbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60V N-Channel MOSFET 文件：1.18877 Mbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
STP55N06产品属性
- 类型
描述
- 型号
STP55N06
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
原装 |
25+ |
TO-220 |
20300 |
原装特价STP55N06L即刻询购立享优惠#长期有货 |
|||
ST |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
ST |
NEW |
TO-220 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST全系列 |
25+23+ |
TO-220F |
26806 |
绝对原装正品全新进口深圳现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+ |
TO220 |
16900 |
原装，请咨询 |
|||
ST |
24+ |
N/A |
4500 |
||||
ST/进口原 |
17+ |
TO-220 |
6200 |
STP55N06规格书下载地址
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DdatasheetPDF页码索引
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