DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.019 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 °C

■ HIGH dv/dt CAPABILITY

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION