DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.018 Ω

■ EXCEPTIONAL dV/dt CAPABILTY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 °C

■ HIGH dV/dt CAPABILITY

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION